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IJE TRANSACTIONS A: Basics Vol. 27, No. 10 (October 2014) 1573-1580
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COMPARATIVE INVESTIGATION OF HALF-MODE SIW CAVITY AND MICROSTRIP HYBRID ANTENNA USING DIFFERENT PATCH SHAPES
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H. Dashti and M. H. Neshati
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( Received:
March 05, 2014
– Accepted: May 22, 2014 )
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Abstract
A set of hybrid microstrip patch and semi-circular cavity antennas is introduced. The semi-circular cavity is
implemented using Half-mode Substrate Integrated Waveguide (HMSIW) technique. Different shapes of patch include
rectangular, semi-circular and equilateral triangular are excited using proximity effect by the circular SIW cavity at
its TM010 mode of operation. The whole structures have been excited using an inset microstrip line that leads
to facility of planar circuit integration. The inherent limited bandwidth of the conventional microstrip patch antenna
and SIW cavity-backed slot antenna is improved about 6% to 9.5% depending on the type of the patch using the proposed
structure. Additionally, the proposed hybrid antenna enhances the antenna gain by about 1.5 dB. Meanwhile, the proposed
hybrid antennas are made on a single-layer substrate has a low fabrication cost using printed circuit board (PCB)
process. Three hybrid antennas are numerically and experimentally investigated. A comparative study between the three
different structures contains gain, bandwidth, cross polarization level (CPL) and Front to Back Ratio (FTBR) is
presented.
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Keywords
Hybrid antenna, microstrip patch, SIW cavity
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چکیده
در این مقاله یک مجموعه از آنتنهای ترکیبی شامل محفظه نیم دایرهای با فناوری موجبر مجنمع شده در زیر لایه و پچ مایکرواستریپ معرفی شده است. محفظه نیم دایرهای توسط فناوری موجبر مجتمع شده در زیر لایه نیم مود (HMSIW) پیادهسازی شده است. شکلهای مختلف از پچ شامل مستطیلی، نیم دایره ای و مثلثی متساوی الاضلاع با استفاده از اثر مجاورت توسط حفره SIW دایروی در مود کاری TM010، تحریک شدهاند. کل ساختار توسط یک خط مایکرواستریپ تحریک شده که این امر مجتمع شدن ساختار با مدارهای مسطح را تسهیل میکند. محدودیت ذاتی پهنای باند آنتنهای پچ مایکرواستریپ و شکافهای تحت حمایت حفره SIW حدود 6% تا 5/9% بسته به نوع پچ بهکار رفته، بهبود مییابد. بعلاوه، آنتن ترکیبی پیشنهادی حدود dB 5/1 بهره را افزایش داده است. در حالیکه آنتن ترکیبی پیشنهادی با هزینه ساخت کم توسط فرآیند برد مدار چاپی (PCB) روی یک زیر لایه ساخته شده است. سه آنتن ترکیبی به صورت عددی و تجربی بررسی شدهاند. یک مقایسه بین این ساختارها از نظر بهره، پهنای باند، سطح قطبش مخالف و مقدار FTBR ارائه شده است.
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