IJE TRANSACTIONS B: Applications Vol. 30, No. 11 (November 2017) 1771-1775   

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V. S. Zakhvalinskii, M. Alam, T. B. Nikulicheva, E. Lahderanta, M. A. Shakhov, E. A. Piljuk, S. V. Ivanchikhin and A. V. Kochura
( Received: October 20, 2016 – Accepted in Revised Form: September 08, 2017 )

Abstract    The growth processes of Tetragonal single crystals of solid solution (Cd0.6Zn0.32Mn0.08)3As2, space group P42/nmc, has been synthesized by Bridgman method. Conductivity and magnetoresistance of (Cd0.6Zn0.32Mn0.08)3As2 were measured in the range 1.6K to 300K and in magnetic field up to 25 T. Crossover from Mott variable-range-hopping conductivity mechanism close to helium temperatures. In this work, we found the width of the coulomb D = 0.21 meV and a rigid gap δ = 0.026 meV in the density of localized states, concentration and localization radius of charge carriers.


Keywords    single crystals, solid solutions, hopping conductivity, Dirac semimetal.


چکیده    فرایندهای رشد تک­بلور تتراگونگال محلول جامد فرایند تولید تک­بلور (Cd0.6Zn0.32Mn0.08) 3As2 با گروه فضایی P42 / nmc به روش Bridgman انجام شد. هدایت الکتریکی و مقاومت مغناطیسی (Cd0.6Zn0.32Mn0.08) 3As2 در محدوده دمای 1.6 تا K 300 و در میدان مغناطیسی تا T 25 اندازه گیری شد. انتقال از مکانیزم هدایت متغیر دامنه Mott نزدیک به دمای هلیوم در این کار بررسی شد. عرض کولمب D = 0.21 meV و شکاف سفتی δ = 0.026 meV در تراکم حالت­های موضعی، غلظت و شعاع موضعی حامل­های بار به دست آمد.


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