IJE TRANSACTIONS B: Applications Vol. 31, No. 5 (May 2018) 712-718    Article in Press

downloaded Downloaded: 60   viewed Viewed: 767

S. Rastani and H. Babai
( Received: July 12, 2017 – Accepted in Revised Form: January 14, 2018 )

Abstract    Deposition process for thin insulator used in polysilicon gate dielectric of thin film transistors are optimized. Silane and N2O plasma are used to form SiO2 layers at temperatures below 150 ºC. The deposition conditions as well as system operating parameters such as pressure, temperature, gas flow ratios, total flow rate and plasma power are also studied and their effects are discussed. The physical aspects of the yielded dielectrics such as layer thickness and uniformity are presented as well.


Keywords    Plasma Deposition; Thin Film Transistor; Display; Process Optimization; Low Temperature Dielectric


چکیده    دی الکتریک لازم برای گیت پلی سیلیکان ترانزیستور های لایه نازک نمایشگرها ی مسطح تهیه و فرآیند ساخت بهینه سازی گردیده است. از پلاسمای گازهای سیلان و اکسید نیتروژن برای ساخت اکسید سیلیسیوم در دمایی پایین تر از 150 درجه سانتیگراد استفاده شده است. شرایط لایه نشانی و پارامتر های عملیاتی سیستم مانند فشار، دما، نسبت شار گازها، شار کل و توان پلاسما مورد مطالعه و اثر هر کدام مورد بحث قرار گرفته است. همچنین خواص فیزیکی دی الکتریک بدست آمده نظیر قطر لایه و یکنواختی آن ارائه گردیده است.


1.     Reita, C., "Integrated driver circuits for active matrix liquid crystal displays", Displays,  Vol. 14, No. 2, (1993), 104-114.

2.     Brotherton, S., "Polycrystalline silicon thin film transistors", Semiconductor Science and Technology,  Vol. 10, No. 6, (1995), 721-738.

3.     Edwards, M., "Nmos and cmos polysilicon drive circuits for liquid crystal displays", IEE Proceedings-Circuits, Devices and Systems,  Vol. 141, No. 1, (1994), 50-55.

4.     Robertson, J., "Electronic structure of silicon nitride", Philosophical Magazine B,  Vol. 63, No. 1, (1991), 47-77.

5.     Vaezi, M. and Zameni, M., "Synthesis of zinc oxide nanostructured thin film by sol-gel method and evaluation of gas sensing properties", International Journal of Engineering-Transactions B: Applications,  Vol. 27, No. 5, (2013), 757-762.

6.     Nikzad, L., Vaezi, M., Alibeigi, S. and Esmaielzadeh, K.A., "Preparation of cobalt oxide/zinc oxide nanocomposite",  International Journal of Engineering-Transactions B: Applications,  Vol. 27, No. 5, (2010), 131-135,

7.     Khalili, V., Khalil, A.J. and Maleki, G.H., "Titanium oxide (tio2) coatings on niti shape memory substrate using electrophoretic deposition process", International Journal of Engineering-Transactions A: Basics,  Vol. 26, No. 7, (2013), 707-712.

 8.     Hossein, B.F. and Orvatinia, M., "Thickness dependence of sensitivity in thin film tin oxide gas sensors deposited by vapor pyrolysis", International Journal of Engineering-Transactions B: Applications,  Vol. 16, No. 1, (2003), 33-40.

9.     Ohwada, J.-I., Takabatake, M., Ono, Y.A., Nagae, Y., Mimura, A., Ono, K. and Konishi, N., "Peripheral circuit integrated poly-si tft lcd with gray scale representation", in Display Research Conference, 1988., Conference Record of the 1988 International, IEEE. (1988), 215-219.

10.   Kim, J., Hwang, S. and Yi, J., "Sio 2 films deposited at low temperature by using apcvd with teos/o 3 for tft applications", Journal of the Korean Physical Society,  Vol. 49, No. 3, (2006), 1121-1125.

11.   Maeda, M. and Nakamura, H., "Deposition kinetics of sio2 film", Journal of Applied Physics,  Vol. 52, No. 11, (1981), 6651-6654.

12.   Padmanabhan, K. and Prabhu, G., "Experimental investigation by cryogenic treatment of aluminium 6063 and 8011 and nicow coating to improve hardness and wear", International Journal of Engineering-Transactions C: Aspects,  Vol. 29, No. 6, (2016), 827-833.

13.   Golbakhshi, H., Namjoo, M. and Estabragh, E.R., "Evaluating the effects of ceramic layer and thermal dam on optimizing the temperature gradient of a gasoline engine piston", International Journal of Engineering-Transactions A: Basics,  Vol. 28, No. 10, (2015), 1525-1532.

14.   Azadia, M., Rouhaghdam, A.S. and Ahangarani, S., "Effect of temperature and gas flux on the mechanical behavior of tic coating by pulsed dc plasma enhanced chemical vapor deposition", International Journal of Engineering-Transactions B: Applications,  Vol. 27, No. 8, (2013), 1243-1250.

15.   Akhondizadeh, M., FOOLADI, M.M., Mansouri, S. and Rezaeizadeh, M., "A new procedure of impact wear evaluation of mill liner", International Journal of Engineering-Transactions A: Basics,  Vol. 28, No. 4, (2015), 593-598.

16.   Hattangady, S., Alley, R., Fountain, G., Markunas, R., Lucovsky, G. and Temple, D., "Effect of rf power on remoteplasma deposited sio2 films", Journal of Applied Physics,  Vol. 73, No. 11, (1993), 7635-7642.

17.   Batey, J. and Tierney, E., "Lowtemperature deposition of highquality silicon dioxide by plasmaenhanced chemical vapor deposition", Journal of Applied Physics,  Vol. 60, No. 9, (1986), 3136-3145.

18.   Riera, M., Rodriguez, J., Barreto, J. and Domínguez, C., "Modeling of non-stoichiometric silicon oxides obtained by plasma enhanced chemical vapour deposition process", Thin Solid Films,  Vol. 515, No. 7-8, (2007), 3380-3386.


International Journal of Engineering
E-mail: office@ije.ir
Web Site: http://www.ije.ir